Machine Polishing Processes

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	UPC Connector (2.5 mm), Domaille Polisher	Final Polish film as used on a Domaille machine
	APC Connector (2.5 mm), Domaille Polisher
	APC Connector (2.5 mm), Nanometer Polisher
	UPC Connector (2.5 mm), Nanometer Polisher
	UPC Connector (2.5 mm), Seikoh Giken 550 Polisher
	UPC Connector (2.5 mm), Seikoh Giken 510 Polisher
	UPC Connector (2.5 mm), OFL 12 Polisher
	LC Polishing Process

The processes described require the use of de-ionised water for each stage except when using Silicon Carbide. Using an atomiser to apply the water gives a uniform coating of water across the surface of the film. The number of uses of each film will vary according to the machine being used, the number of connectors polished at each stage and the pressure being applied. Polishing films and fibre end faces should be cleaned after each cycle and care should be taken not to contaminate films or fibres.

APC Connector (2.5 mm), Domaille Polisher

Step	Polishing Film			Process
	Micron	Mineral	Product ID	Pressure	Time	Speed	Pad
Denub	15 µm	SiC	461X (468X w/ PSA)	by hand	remove nub	by hand	n/a
Angle forming/Remove Epoxy	15 µm	SiC	461X (468X w/ PSA)	4.0 lbs	**	140 rpm	glass
Repeat Angle forming/Remove Epoxy (new disc)	15 µm	SiC	461X (468X w/ PSA)	4.0 lbs	**	140 rpm	glass
Step 3	6 µm	diamond	662XW (666XY w/ PSA)	4.0 lbs	**	140 rpm	80 D
Step 4	3 µm	diamond	662XW (666XY w/ PSA)	4.0 lbs	**	140 rpm	80 D
Step 5	1 µm	diamond	662XW (666XY w/ PSA)	4.0 lbs	**	140 rpm	80 D
Step 6	Finishing film	SiO2	865X	4.0 lbs	**	140 rpm	80 D

** For times, contact our technical support service at Tlab@techoptics.com

Click here for information on the Domaille Polishing Machine

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UPC Connector (2.5 mm), Domaille Polisher

Step	Polishing Film			Process
	Micron	Mineral	Product ID	Pressure	Time	Speed	Pad
Denub	15 µm	SiC	461X (468X w/ PSA)	by hand	remove nub	by hand	n/a
Remove Epoxy	15 µm	SiC	461X (468X w/ PSA)	4.0 lbs	**	140 rpm	80 D
Step 2	6 µm	diamond	662XW (666XY w/ PSA)	4.0 lbs	**	140 rpm	80 D
Step 3	3 µm	diamond	662XW (666XY w/ PSA)	4.0 lbs	**	140 rpm	80 D
Step 4	1 µm	diamond	662XW (666XY w/ PSA)	4.0 lbs	**	140 rpm	80 D
Step 5	Finishing film	SiO2	865X	4.0 lbs	**	140 rpm	80 D

* Steps 2 and 3 can be eliminated, but epoxy removal step would be a 3 µm SiC 463X
** For times, contact our technical support service at Tlab@techoptics.com

Click here for information on the Domaille Polishing Machine

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APC Connector (2.5 mm), Nanometer Polisher

Step	Polishing Film			Process
	Micron	Mineral	Product ID	Time	Pad
Denub	15 µm	SiC	461X (468X w/ PSA)	remove nub	n/a
Angle forming/Remove Epoxy	15 µm	SiC	461X (468X w/ PSA)	**	glass
Step 3	6 µm	diamond	662XW (666XY w/ PSA)	**	60 D
Step 4	3 µm	diamond	662XW (666XY w/ PSA)	**	60 D
Step 5	1 µm	diamond	662XW (666XY w/ PSA)	**	60 D
Step 6	Finishing film	SiO2	865X	**	80 D

Angle forming/Remove Epoxy can be done with 9 µm MB disc
** For times, contact our technical support service at Tlab@techoptics.com

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UPC Connector (2.5 mm), Nanometer Polisher

Step	Polishing Film			Process
	Micron	Mineral	Product ID	Time	Pad
Denub	15 µm	SiC	461X (468X w/ PSA)	remove nub	n/a
Remove Epoxy	15 µm	SiC	461X (468X w/ PSA)	**	60 D
Step 2	6 µm	diamond	662XW (666XY w/ PSA)	**	60 D
Step 3	3 µm	diamond	662XW (666XY w/ PSA)	**	60 D
Step 4	1 µm	diamond	662XW (666XY w/ PSA)	**	60 D
Step 5	Finishing film	SiO2	865X	**	80 D

** For times, contact our technical support service at Tlab@techoptics.com

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UPC Connector (2.5 mm), Seikoh Giken 550 Polisher

Step	Polishing Film			Process
	Micron	Mineral	Product ID	Pressure	Time	Pad
Denub	15 µm	SiC	461X (468X w/ PSA)	by hand	remove nub	n/a
Remove Epoxy	3 µm	SiC	463X (468XW w/ PSA)	Clamps	**	80 D
Step 3	1 µm	diamond	662XW (666XY w/ PSA)	Clamps	**	80 D
Step 4	0.5µm	diamond	662XW (666XY w/ PSA)	Clamps	**	80D
Step 5	Finishing film	SiO2	865X	Clamps	**	80 D

** For times, contact our technical support service at Tlab@techoptics.com

UPC Connector (2.5 mm), Seikoh Giken 510 Polisher

Step	Polishing Film			Process
	Micron	Mineral	Product ID	Pressure	Time	Pad
Denub	15 µm	SiC	461X (468X w/ PSA)	by hand	remove nub	n/a
Remove Epoxy	5 µm	SiC	464X (466X w/ PSA)	No Pressure	**	80 D
Step 2	3 µm	diamond	662XW (666XY w/ PSA)	locked position	**	80 D
Step 3	1 µm	diamond	662XW (666XY w/ PSA)	locked position	**	80 D
Step 4	0.5 µm	diamond	662XW (668XY w/ PSA)	locked position	**	80 D
Step 5	Finishing film	SiO2	865X	locked position	**	80 D

** For times, contact our technical support service at Tlab@techoptics.com

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UPC Connector (2.5 mm), OFL 12 Polisher

Step	Polishing Film			Process
	Micron	Mineral	Product ID	Pressure	Time	Pad
Denub	15 µm	SiC	461X (468X w/ PSA)	by hand	remove nub	n/a
Remove Epoxy	3 µm	SiC	463X (468XW w/ PSA)	Point 1	**	60 D
Step 2	3 µm	diamond	662XW (666XY w/ PSA)	Point 1	**	60 D
Step 3	1 µm	diamond	662XW (666XY w/ PSA)	Point 1	**	60 D
Step 4	Finishing film	SiO2	865X	Point 1	**	80 D

** For times, contact our technical support service at Tlab@techoptics.com

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For each process the 863XW finishing film can be used in place of the 865X finishing film.

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